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| BC447, BC449, BC449A High Voltage Transistors NPN Silicon http://onsemi.com MAXIMUM RATINGS Rating Collector-Emitter Voltage BC447 BC449, BC449A Collector-Base Voltage BC447 BC449, BC449A Emitter-Base Voltage Collector Current - Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Moisture Sensitivity Level (MSL) Electrostatic Discharge (ESD) Symbol VCEO 80 100 VCBO 80 100 VEBO IC PD 625 5.0 PD 1.5 12 TJ, Tstg -55 to +150 MSL: 1 NA Watts mW/C C 1 2 3 mW mW/C 5.0 300 Vdc mAdc Vdc Value Unit Vdc 2 BASE 3 EMITTER COLLECTOR 1 CASE 29 TO-92 STYLE 17 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Symbol RJA RJC Max 200 83.3 Unit C/W C/W MARKING DIAGRAM BC 44xx YWW BC44xx xx Y WW = Specific Device Code = 7, 9 or 9A = Year = Work Week ORDERING INFORMATION Device BC447 BC449 BC449A Package TO-92 TO-92 TO-92 Shipping 5000 Units/Box 5000 Units/Box 5000 Units/Box (c) Semiconductor Components Industries, LLC, 2003 1 March, 2003 - Rev. 2 Publication Order Number: BC447/D BC447, BC449, BC449A ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage (Note 1) (IC = 1.0 mAdc, IB = 0) Collector - Base Breakdown Voltage (IC = 100 Adc, IE = 0) Emitter - Base Breakdown Voltage (IE = 10 Adc, IC = 0) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) BC447 BC449, BC449A V(BR)CEO BC447 BC449, BC449A V(BR)CBO BC447 BC449, BC449A V(BR)EBO 5.0 ICBO 100 100 nAdc 80 100 Vdc 80 100 Vdc Vdc ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 2.0 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc) (IC = 100 mAdc, VCE = 5.0 Vdc) Collector - Emitter Saturation Voltage (IC = 100 mAdc, IB = 10 mAdc) Base - Emitter Saturation Voltage (IC = 100 mAdc, IB = 10 mAdc) Base - Emitter On Voltage (IC = 2.0 mAdc, VCE = 5.0 Vdc) (IC = 100 mAdc, VCE = 5.0 Vdc) (Note 1) hFE BC447, BC449 BC449A BC447, BC449 BC449A BC447, BC449 BC449A VCE(sat) VBE(sat) VBE(on) 0.55 0.76 0.7 1.2 0.85 Vdc 0.125 0.25 Vdc 50 120 50 100 50 60 460 220 Vdc - DYNAMIC CHARACTERISTICS Current - Gain - Bandwidth Product (IC = 50 mAdc, VCE = 5.0 Vdc, f = 100 MHz) 1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2% fT 100 200 MHz http://onsemi.com 2 BC447, BC449, BC449A f T , CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) 300 TJ = 25C 200 VCE = -1.0 V 100 70 50 30 -1.0 -5.0 V C, CAPACITANCE (pF) 20 Cibo 10 8.0 6.0 Cobo 4.0 2.0 -0.1 -0.2 40 25C TTJ==25C J -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS) Figure 1. Current-Gain -- Bandwidth Product Figure 2. Capacitance 300 t, TIME (ns) 200 100 70 50 30 20 10 ts tf I C , COLLECTOR CURRENT (mA) 1.0 k 700 500 VCC = -40 V IC/IB = 10 IB1 = IB2 TJ = 25C -1.0 k -700 -500 -300 -200 -100 -70 -50 -30 -20 -10 -1.0 tr td @ VBE(off) = -0.5 V -10 -20 -30 -50 -70 -100 -200 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT MPS8598 DUTY CYCLE 10% MPS8599 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA) Figure 3. Switching Times Figure 4. Active-Region Safe Operating Area 300 TJ = 125C 200 h FE, DC CURRENT GAIN V, VOLTAGE (VOLTS) 25C 100 70 50 -55C VCE = -5.0 V 1.0 TJ = 25C VBE(sat) @ IC/IB = 10 VBE @ VCE = 5.0 V 0.8 0.6 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.2 30 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 0.5 1.0 2.0 5.0 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 5. DC Current Gain Figure 6. "ON" Voltages http://onsemi.com 3 BC447, BC449, BC449A VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 2.0 IC = 10 mA IC = 20 mA IC = 50 mA IC = 100 mA IC = 200 mA -1.0 R qVB , TEMPERATURE COEFFICIENT (mV/ C) 1.6 -1.4 1.2 -1.8 -2.2 RqVB FOR VBE -55C TO 125C 0.8 0.4 TJ = 25C 0 0.02 0.05 -2.6 -3.0 0.2 0.1 0.2 0.5 1.0 2.0 5.0 10 20 0.5 1.0 2.0 5.0 10 20 50 100 200 IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 7. Collector Saturation Region Figure 8. Base-Emitter Temperature Coefficient r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 D = 0.5 0.2 0.1 0.05 SINGLE PULSE 0.02 0.01 P(pk) t1 SINGLE PULSE t2 DUTY CYCLE, D = t1/t2 1.0 2.0 5.0 10 20 50 100 200 t, TIME (ms) 500 1.0 k 2.0 k 5.0 k ZJC(t) = r(t) * RJC TJ(pk) - TC = P(pk) ZJC(t) ZJA(t) = r(t) * RJA TJ(pk) - TA = P(pk) ZJA(t) D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN469) 10 k 20 k 50 k 100 k Figure 9. Thermal Response http://onsemi.com 4 BC447, BC449, BC449A PACKAGE DIMENSIONS TO-92 (TO-226) CASE 29-11 ISSUE AL A R P L SEATING PLANE B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --- 0.250 --- 0.080 0.105 --- 0.100 0.115 --- 0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --- 6.35 --- 2.04 2.66 --- 2.54 2.93 --- 3.43 --- K XX G H V 1 D J C SECTION X-X N N DIM A B C D G H J K L N P R V STYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER http://onsemi.com 5 BC447, BC449, BC449A ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada JAPAN: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 6 BC447/D |
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